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TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Copyright (c) 1999, Power Innovations Limited, UK JANUARY 1998 - REVISED MARCH 1999
TELECOMMUNICATION SYSTEM HIGH CURRENT OVERVOLTAGE PROTECTORS
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Analogue Line Card and ISDN Protection - Analogue SLIC - ISDN U Interface - ISDN Power Supply 8 kV 10/700, 200 A 5/310 ITU-T K20/21 rating Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
VDRM DEVICE `5070 `5080 `5110 `5150 V -58 -65 -80 -120 V(BO)
SMBJ PACKAGE (TOP VIEW)
1
2
q q
MDXXBGB
device symbol
2
MINIMUM MAXIMUM V -70 -80 -110 -150
SD5XAB
1
q
Rated for International Surge Wave Shapes
WAVE SHAPE 2/10 s 8/20 s 10/160 s 10/700 s 10/560 s 10/1000 s STANDARD GR-1089-CORE ANSI C62.41 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE ITSP A 500 300 250 200 160 100
description
These devices are designed to limit overvoltages on the telephone and data lines. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of ISDN power supply feeds. Two devices, one for the Ring output and the other for the Tip output, will provide protection for single supply analogue SLICs. A combination of three devices will give a low capacitance protector network for the 3-point protection of ISDN lines. The protector consists of a voltage-triggered unidirectional thyristor with an anti-parallel diode. Negative overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. Positive overvoltages are limited by the conduction of the anti-parallel diode. This TISP5xxxH3BJ range consists of four voltage variants to meet various maximum system voltage levels (58 V to 120 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These high (H) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed carrier reel pack.
PRODUCT
INFORMATION
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Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
absolute maximum ratings, TA = 25C (unless otherwise noted)
RATING `5070 Repetitive peak off-state voltage, (see Note 1) `5080 `5110 `5150 Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 8/20 s (IEC 61000-4-5, 1.2/50 s voltage, 8/20 current combination wave generator) 10/160 s (FCC Part 68, 10/160 s voltage wave shape) 5/200 s (VDE 0433, 10/700 s voltage wave shape) 0.2/310 s (I3124, 0.5/700 s voltage wave shape) 5/310 s (ITU-T K20/21, 10/700 s voltage wave shape) 5/310 s (FTZ R12, 10/700 s voltage wave shape) 10/560 s (FCC Part 68, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 2, 3 and 5) 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Junction temperature Storage temperature range NOTES: 1. 2. 3. 4. 5. Exponential current ramp, Maximum ramp value < 140 A diT/dt TJ Tstg ITSM 55 60 2.1 400 -40 to +150 -65 to +150 A/s C C A ITSP 500 300 250 220 200 200 200 160 100 A VDRM SYMBOL VALUE - 58 - 65 - 80 -120 V UNIT
See Figure 9 for voltage values at lower temperatures. Initially the TISP5xxxH3BJ must be in thermal equilibrium with TJ = 25C. The surge may be repeated after the TISP5xxxH3BJ returns to its initial conditions. See Figure 10 for current ratings at other temperatures. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/C for ambient temperatures above 25 C
electrical characteristics for terminal pair, TA = 25C (unless otherwise noted)
PARAMETER IDRM Repetitive peak offstate current VD = VDRM TEST CONDITIONS TA = 25C TA = 85C `5070 V(BO) Breakover voltage dv/dt = -750 V/ms, RSOURCE = 300 `5080 `5110 `5150 dv/dt -1000 V/s, Linear voltage ramp, V(BO) Impulse breakover voltage Breakover current Forward voltage Peak forward recovery voltage On-state voltage Holding current Maximum ramp value = -500 V di/dt = -20 A/s, Linear current ramp, Maximum ramp value = -10 A I(BO) VF dv/dt = -750 V/ms, IF = 5 A, tW = 500 s dv/dt +1000 V/s, Linear voltage ramp, VFRM Maximum ramp value = +500 V di/dt = +20 A/s, Linear current ramp, Maximum ramp value = +10 A VT IH IT = -5 A, tW = 500 s IT = -5 A, di/dt = +30 mA/ms -0.15 -3 -0.6 V A `5070 thru `5150 5 V RSOURCE = 300 `5070 thru `5150 `5070 `5080 `5110 `5150 -0.15 MIN TYP MAX -5 -10 -70 -80 -110 -150 -80 -90 -120 -160 -0.6 3 A V V V UNIT A
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INFORMATION
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
electrical characteristics for terminal pair, TA = 25C (unless otherwise noted) (continued)
PARAMETER dv/dt ID Critical rate of rise of off-state voltage Off-state current TEST CONDITIONS Linear voltage ramp, Maximum ramp value < 0.85VDRM VD = -50 V f = 100 kHz, (see Note 6) Vd = 1 Vrms, VD = -1V, TA = 85C `5070 `5080 `5110 `5150 f = 100 kHz, Coff Off-state capacitance f = 100 kHz, Vd = 1 Vrms, VD = -50 V Vd = 1 Vrms, VD = -2 V `5070 `5080 `5110 `5150 `5070 `5080 `5110 `5150 f = 100 kHz, NOTE Vd = 1 Vrms, VD = -100 V `5150 300 280 240 140 260 245 205 120 90 80 65 35 30 MIN -5 -10 420 390 335 195 365 345 285 170 125 110 90 50 40 pF TYP MAX UNIT kV/s A
6: Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on connection inductance.
thermal characteristics
PARAMETER TEST CONDITIONS EIA/JESD51-3 PCB, IT = ITSM(1000), RJA Junction to free air thermal resistance TA = 25 C, (see Note 7) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 C NOTE 50 MIN TYP MAX 113 C/W UNIT
7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
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INFORMATION
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TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
PARAMETER MEASUREMENT INFORMATION
+i ITSP Quadrant I Forward Conduction Characteristic
ITSM IF VF
VDRM -v IDRM
VD ID
+v
I(BO)
IH
V(BO)
VT IT ITSM
Quadrant III Switching Characteristic -i ITSP
PMXXACA
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINAL PAIR ALL MEASUREMENTS ARE REFERENCED TO TERMINAL 1
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INFORMATION
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
TYPICAL CHARACTERISTICS
OFF-STATE CURRENT vs JUNCTION TEMPERATURE
100
TC5XAFA
1.10
NORMALISED BREAKOVER VOLTAGE vs JUNCTION TEMPERATURE TC5XAIA
Normalised Breakover Voltage
10 ID - Off-State Current - A
1.05
1
0*1 VD = -50 V 0*01
1.00
0*001 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
0.95 -25 0 25 50 75 100 125 150 TJ - Junction Temperature - C
Figure 2. ON-STATE AND FORWARD CURRENTS vs ON-STATE AND FORWARD VOLTAGES
IT , IF - On-State Current, Forward Current - A 200 150 100 70 50 40 30 20 15 10 7 5 4 3 2 1.5 1 0.7
TC5LAC
Figure 3. NORMALISED HOLDING CURRENT vs JUNCTION TEMPERATURE TC5XAD
2.0 TA = 25 C tW = 100 s 1.5 Normalised Holding Current
1.0 0.9 0.8 0.7 0.6 0.5 0.4 -25 0 25 50 75 100 125 TJ - Junction Temperature - C 150
VF
VT
1 1.5 2 3 45 7 10 VT , VF- On-State Voltage, Forward Voltage - V
Figure 4.
Figure 5.
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TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
TYPICAL CHARACTERISTICS
OFF-STATE CAPACITANCE vs OFF-STATE VOLTAGE
300 C - Differential Off-State Capacitance - pF TJ = 25C Vd = 1 Vrms
TC5XAB
DIFFERENTIAL OFF-STATE CAPACITANCE vs RATED REPETITIVE PEAK OFF-STATE VOLTAGE
190 '5070 '5080 '5110 180 170 160 150 140 130 120 110 100 90 80 58 65 80 120 VDRM - Negative Repetitive Peak Off-State Voltage - V
TC5XAE
200 150 Coff - Capacitance - pF
100 90 80 70 60 50 40 30
'5070 '5080 '5110
C = Coff(-2 V) - Coff(-50 V)
'5150
20 1 2 3 5 10 20 30 50 VD - Negative Off-state Voltage - V 100
Figure 6.
Figure 7.
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INFORMATION
'5150
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
RATING AND THERMAL INFORMATION
NON-REPETITIVE PEAK ON-STATE CURRENT vs CURRENT DURATION
ITSM(t) - Non-Repetitive Peak On-State Current - A 30 VGEN = 600 Vrms, 50/60 Hz 20 15 10 9 8 7 6 5 4 3 2 1.5 0*1 RGEN = 1.4*VGEN/ITSM(t) EIA/JESD51-2 ENVIRONMENT EIA/JESD51-3 PCB TA = 25 C
TI5HAC
1
10
100
1000
t - Current Duration - s
Figure 8. VDRM DERATING FACTOR vs MINIMUM AMBIENT TEMPERATURE
1.00 0.99 0.98 Derating Factor 0.97 0.96 0.95 0.94 0.93 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 TAMIN - Minimum Ambient Temperature - C
TI5XAD
IMPULSE RATING vs AMBIENT TEMPERATURE
700 600 500 400 Impulse Current - A 300 250 BELLCORE 2/10
TC5XAA
IEC 1.2/50, 8/20
FCC 10/160 ITU-T 10/700
200 FCC 10/560 150 120 100 90 80 -40 -30 -20 -10 0 BELLCORE 10/1000
10 20 30 40 50 60 70 80
TA - Ambient Temperature - C
Figure 9.
Figure 10.
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INFORMATION
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TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
APPLICATIONS INFORMATION deployment
These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two points (Figure 11) or in multiples to limit the voltage at several points in a circuit (Figure 12).
SIGNAL
AI4XAC
R1a R1b TISP5xxxH3BJ - D.C.
Figure 11. POWER SUPPLY PROTECTION In Figure 11, the TISP5xxxH3BJ limits the maximum voltage of the negative supply to -V(BO) and +VF. This configuration can be used for protecting circuits where the voltage polarity does not reverse in normal operation. In Figure 12, the two TISP5xxxH3BJ protectors, Th4 and Th5, limit the maximum voltage of the SLIC (Subscriber Line Interface Circuit) outputs to -V(BO) and +VF. Ring and test protection is given by protectors Th1, Th2 and Th3. Protectors Th1 and Th2 limit the maximum tip and ring wire voltages to the V(BO) of the individual protector. Protector Th3 limits the maximum voltage between the two conductors to its V(BO) value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then protector Th3 is not required.
OVERCURRENT PROTECTION TIP WIRE R1a
RING/TEST PROTECTION
TEST RELAY
RING RELAY
SLIC RELAY S3a
SLIC PROTECTION TISP5xxxH3BJ
Th1 Th3 Th2 RING WIRE R1b
S1a
S2a
Th4 SLIC Th5
S3b S1b S2b VBAT
TEST EQUIPMENT
RING GENERATOR
AI4XAA
Figure 12. LINE CARD SLIC PROTECTION
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INFORMATION
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
broad-band protection.
The star-connection of three TISP5xxxH3BJ protectors gives a protection circuit which has a low differential capacitance to ground (Figure 13). This example, a -100 V ISDN line is protected. In Figure 13, the circuit illustration A shows that protector Th1 will be forward biased as it is connected to the most negative potential. The other two protectors, Th2 and Th3 will be reverse biased as protector Th1 will pull their common connection to within 0.5 V of the negative voltage supply.
Th1 Th3 SIGNAL Th2
C0.5 V 600 pF
26 pF 29 pF 26 pF C-99.5 V 1 pF
C-99.5 V 29 pF
A) STAR-CONNECTED U-INTERFACE PROTECTOR
- 100 V
B) EQUIVALENT TISP5150H3BJ CAPACITANCES
- 100 V
C) DELTA EQUIVALENT SHOWS 25 pF LINE UNBALANCE
- 100 V AI4XAB
Figure 13. ISDN LOW CAPACITANCE U-INTERFACE PROTECTION Illustration B shows the equivalent capacitances of the two reverse biased protectors (Th2 and Th3) as 29 pF each and the capacitance of the forward biased protector (Th1) as 600 pF. Illustration C shows the delta equivalent of the star capacitances of illustration B. The protector circuit differential capacitance will be 26 - 1 = 25 pF. In this circuit, the differential capacitance value cannot exceed the capacitance value of the ground protector (Th3). A bridge circuit can be used for low capacitance differential. Whatever the potential of the ring and tip conductors are in Figure 14, the array of steering diodes, D1 through to D6, ensure that terminal 1 of protector Th1 is always positive with respect to terminal 2. The protection voltage will be the sum of the protector Th1, V(BO), and the forward voltage of the appropriate series diodes. It is important to select the correct diodes. Diodes D3 through to D6 divert the currents from the ring and tip lines. Diodes D1 and D2 will carry the sum of the ring and tip currents and so conduct twice the current of the other four diodes. The diodes need to be specified for forward recovery voltage, VFRM, under the expected impulse conditions. (Some conventional a.c. rectifiers can produce as much as 70 V of forward recovery voltage, which would be an extra 140 V added to the V(BO) of Th1). In principle the bridge circuit can be extended to protect more than two conductors by adding extra legs to the bridge.
RING TIP
1
D1
D3
D5
2 Th1 D2 AI5XAC D4 D6
Figure 14. LOW CAPACITANCE BRIDGE PROTECTION CIRCUIT
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INFORMATION
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TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
ISDN device selection
The ETSI Technical Report ETR 080:1993 defines several range values in terms of maximum and minimum ISDN feeding voltages. The following table shows that ranges 1 and 2 can use a TISP5110H3BJ protector and ranges 3 to 5 can use a TISP5150H3BJ protector.
FEEDING VOLTAGE RANGE MINIMUM MAXIMUM V 1 2 3 4 5 51 66 91 90 105 V 69 70 99 110 115 -120 TISP5150H3BJ STANDOFF VOLTAGE VDRM V -80 TISP5110H3BJ DEVICE #
impulse testing
To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave forms. The table below shows some common values.
PEAK VOLTAGE STANDARD SETTING V GR-1089-CORE 2500 1000 1500 FCC Part 68 (March 1998) I3124 ITU-T K20/K21 800 1500 1000 1500 1500 4000 VOLTAGE WAVE FORM s 2/10 10/1000 10/160 10/560 9/720 9/720 0.5/700 10/700 PEAK CURRENT VALUE A 500 100 200 100 37.5 25 37.5 37.5 100 CURRENT WAVE FORM s 2/10 10/1000 10/160 10/560 5/320 5/320 0.2/310 5/310 TISP5xxxH3 25 C RATING A 500 100 250 160 200 200 200 200 SERIES RESISTANCE 0 0 0 0 0 0 0
FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K21 10/700 impulse generator
If the impulse generator current exceeds the protectors current rating then a series resistance can be used to reduce the current to the protectors rated value and so prevent possible failure. The required value of series resistance for a given waveform is given by the following calculations. First, the minimum total circuit impedance is found by dividing the impulse generators peak voltage by the protectors rated current. The impulse generators fictive impedance (generators peak voltage divided by peak short circuit current) is then subtracted from the minimum total circuit impedance to give the required value of series resistance. In some cases the equipment will require verification over a temperature range. By using the rated waveform values from Figure 10, the appropriate series resistor value can be calculated for ambient temperatures in the range of -40 C to 85 C. If the devices are used in a star-connection, then the ground return protector, Th3 in Figure 13, will conduct the combined current of protectors Th1 and Th2. Similarly in the bridge connection (Figure 14), the protector Th1 must be rated for the sum of the conductor currents. In these cases, it may be necessary to include some series resistance in the conductor feed to reduce the impulse current to within the protectors ratings.
a.c. power testing
The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefficient) resistors and fusible resistors are overcurrent protection devices which can be used
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INFORMATION
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
to reduce the current flow. Protective fuses may range from a few hundred milliamperes to one ampere. In some cases it may be necessary to add some extra series resistance to prevent the fuse opening during impulse testing. The current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases there may be a further time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).
capacitance
The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of -1 V, -2 V and -50 V. The TISP5150H3BJ is also given for a bias of -100 V. Values for other voltages may be determined from Figure 6. Up to 10 MHz the capacitance is essentially independent of frequency. Above 10 MHz the effective capacitance is strongly dependent on connection inductance. In Figure 12, the typical conductor bias voltages will be about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at -50 V. For example, the TISP5070H3BJ has a differential capacitance value of 166 pF under these conditions.
normal system voltage levels
The protector should not clip or limit the voltages that occur in normal system operation. Figure 9 allows the calculation of the protector VDRM value at temperatures below 25 C. The calculated value should not be less than the maximum normal system voltages. The TISP5150H3BJ, with a VDRM of -120 V, can be used to protect ISDN feed voltages having maximum values of -99 V, -110 V and -115 V (range 3 through to range 5). These three range voltages represent 0.83 (99/120), 0.92 (110/120) and 0.96 (115/120) of the -120 V TISP5150H3BJ VDRM. Figure 9 shows that the VDRM will have decreased to 0.944 of its 25 C value at -40 C. Thus the supply feed voltages of -99 V (0.83) and -110 V (0.92) will not be clipped at temperatures down to -40 C. The -115 V (0.96) feed supply may be clipped if the ambient temperature falls below -21 C.
JESD51 thermal measurement method
To standardise thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard (JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board) horizontally mounted at the centre. Part 3 of the standard (JESD51-3, 1996) defines two test PCBs for surface mount components; one for packages smaller than 27 mm on a side and the other for packages up to 48 mm. The SMBJ measurements used the smaller 76.2 mm x 114.3 mm (3.0 " x 4.5 ") PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resistance and so can dissipate higher power levels than indicated by the JESD51 values.
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INFORMATION
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TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
MECHANICAL DATA SMBJ (DO-214AA) plastic surface mount diode package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB 4,57 4,06
3,94 3,30
2
Index Mark (if needed)
2,40 2,00
1,52 0,76
2,10 1,90 5,59 5,21
0,20 0,10
2,32 1,96
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBHA
PRODUCT
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INFORMATION
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
MECHANICAL DATA recommended printed wiring footprint.
SMB Pad Size 2.54
2.40
2.16 ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBI
device symbolization code
Devices will be coded as below. Terminal 1 is identified by a bar index mark.
DEVICE TISP5070H3BJ TISP5080H3BJ TISP5110H3BJ TISP5150H3BJ SYMOBLIZATION CODE 5070H3 5080H3 5110H3 5150H3
carrier information
The carrier for production quantities is embossed tape reel pack. Evaluation quantities will be shipped in the most practical carrier.
CARRIER Embossed Tape Reel Pack (3000 Devices are on a Reel) ORDER # TISP5xxxH3BJR
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INFORMATION
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TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
MECHANICAL DATA tape dimensions
SMB Package Single-Sprocket Tape
4,10 3,90 2,05 1,95
1,65 1,55 1,85 1,65 0,40 MAX.
5,55 5,45
12,30 11,70
8,20 MAX.
8,10 7,90 Direction of Feed
o 1,5 MIN. Carrier Tape Embossment 20
0 MIN.
Cover Tape 4,5 MAX.
Maximium component rotation
Index Mark
Typical component cavity centre line Typical component centre line
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The clearance between the component and the cavity must be within 0,05 mm MIN. to 0,65 mm MAX. so that the component cannot rotate more than 20 within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:Reel diameter: 330 3,0 mm Reel hub diameter 75 mm MIN. Reel axial hole: 13,0 0,5 mm C. 3000 devices are on a reel. MDXXBJ
PRODUCT
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INFORMATION
TISP5070H3BJ, TISP5080H3BJ, TISP5110H3BJ, TISP5150H3BJ FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
JANUARY 1998 - REVISED MARCH 1999
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. PI assumes no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORISED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1999, Power Innovations Limited
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INFORMATION
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